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rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 1 of 13 SUF2001 dual n and p-channel trench mosfet 30v dual n- and p-channel trench mosfet features ? low v gs(th) : v gs(th) =1.0~3.0v ? small footprint due to small package ? low r gds(on) : n-ch, r ds(on) =24m ? (@ v gs= 10v, i d= 2.9a) p-ch, r ds(on) =66m ? (@ v gs= -10v, i d =-2.7a) ordering information part number marking code package SUF2001 SUF2001 sop-8 marking information absolute maximum ratings (t a =25 ? c unless otherwise noted) characteristic symbol rating unit n-ch p-ch drain-source voltage v dss 30 -30 v gate-source voltage v gss ? 20 v drain current (dc) i d 5.8 -5.3 a drain current (pulsed) * i dp 23.2 -21.2 a total power dissipation ** p d 2 w avalanche current (single) i as 5.8 -5.3 a single pulsed avalanche energy e as 72 33 mj avalanche current (repetitive) i ar 5.8 -5.3 a repetitive avalanche energy e ar 3.4 1.6 mj junction temperature t j 150 ? c storage temperature range t stg -55~150 thermal resistance junction to ambient r th(j-a) 62.5 ? c/w * limited by maximum junction temperature ** device mounted on a glass-epoxy board column 1: device code column 2: production information -. y: year code -. ww: week code SUF2001 yww sop-8
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 2 of 13 n-channel mosfet electrical characteristics characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250 ? a, v gs =0 30 - - v gate threshold voltage v gs(th) i d =250 ? a, v ds = v gs 1.0 - 3.0 v drain-source cut-off current i dss v ds =30v, v gs =0v - - 1 ? a gate leakage current i gss v ds =0v, v gs = ? 20v - - ? 100 na drain-source on-resistance r ds(on) v gs =10v, i d =2.9a - 24 30 m ? v gs =5.0v, i d =2.9a - 28 34 m ? forward transfer conductance g fs v ds =5v, i d =5.8a - 12 - s input capacitance ciss v gs =0v, v ds =10v, f=1mhz - 370 560 pf output capacitance coss - 60 90 reverse transfer capacitance crss - 36 54 turn-on delay time ? t d(on) v ds =15v, i d =5.8a r g =10 ? - 1.2 - ns rise time ? t r - 1.1 - turn-off delay time ? t d(off) - 2.5 - fall time ? t f - 1.1 - total gate charge ? q g v ds =15v, v gs =5v i d =5.8a - 4.2 6.3 nc gate-source charge ? q gs - 0.9 1.4 gate-drain charge ? q gd - 1.4 2.1 source-drain diode ratings and characteristics characteristic symbol test condition min typ max unit source current i s integral reverse diode in the mosfet - - 1.5 a source current(pulsed) i sm - - 6.0 forward voltage v sd v gs =0v, i s =1.5a - - 1.2 v reverse recovery time t rr i s =1.5a, di s / dt=100a/us - 90 - ns reverse recovery charge q rr - 0.5 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=3.4mh, i as =5.8a, v dd =15v, r g =25 ? pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 3 of 13 p-channel mosfet electrical characteristics characteristic symbol test condition min. typ. max. unit drain-source breakdown voltage bv dss i d =250 ? a, v gs =0 -30 - - v gate threshold voltage v gs(th) i d =250 ? a, v ds =v gs -1.0 - -3.0 v drain-source cut-off current i dss v ds =-30v, v gs =0v - - 1 ? a gate leakage current i gss v ds =0v, v gs = ? 20v - - ? 100 na drain-source on-resistance r ds(on) v gs =-10v, i d =-2.7a - 66 72 m ? v gs =-5.0v, i d =-2.7a - 77 83 m ? forward transfer conductance g fs v ds =-5v, i d =-5.3a - 11 - s input capacitance ciss v gs =0v, v dd =-10v, f=1mhz - 390 590 pf output capacitance coss - 97 150 reverse transfer capacitance crss - 37 60 turn-on delay time ? t d(on) v ds =-15v, i d =-5.3a r g =10 ? - 1.2 - ns rise time ? t r - 1.1 - turn-off delay time ? t d(off) - 2.5 - fall time ? t f - 1.1 - total gate charge ? q g v ds =-15v, v gs =-5v i d =-5.3a - 4.7 7.0 nc gate-source charge ? q gs - 1.4 2.1 gate-drain charge ? q gd - 1.7 2.5 source-drain diode ratings and characteristics characteristic symbol test condition min typ max unit source current i s integral reverse diode in the mosfet - - -1.5 a source current (pulsed) i sm - - -6.0 forward voltage v sd v gs =0v, i s =-1.5a - - -1.2 v reverse recovery time t rr i s =-1.5a di s /dt=100a/us - 90 - ns reverse recovery charge q rr - 0.5 - uc note ; repetitive rating : pulse width limited by maximum junction temperature l=2.0mh, i as =-5.0a, v dd =-15v, r g =25 ? pulse test : pulse width 300us, duty cycle 2% essentially independent of operating temperature SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 4 of 13 n-ch electrical characteristic curves - m fi g . 1 i d - v ds fig. 4 i s - v sd fi g . 3 r ds ( on ) - i d fig. 6 v gs - q g fig. 2 i d - v gs fig. 5 capacitance - v ds SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 5 of 13 SUF2001 * t c c fig. 8 r ds(on) - t j fi g . 9 i d - t a fi g . 7 v dss - t j fi g . 10 safe o p eratin g area
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 6 of 13 fi g . 11 gate char g e test circuit & waveform fi g . 12 resistive switchin g test circuit & waveform fi g . 13 e as test circuit & waveform SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 7 of 13 fig. 14 diode reverse recovery time test circuit & waveform SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 8 of 13 p-ch electrical characteristic curves - - - m - - - a - - fi g . 1 i d - v ds fig. 4 i s - v sd fi g . 3 r ds ( on ) - i d fig. 6 v gs - q g fig. 2 i d - v gs fig. 5 capacitance - v ds SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 9 of 13 * c - c fig. 8 r ds(on) - t j fi g . 9 i d - t a fi g . 7 v dss - t j fi g . 10 safe o p eratin g area t SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 10 of 13 fi g . 11 gate char g e test circuit & waveform fi g . 12 resistive switchin g test circuit & waveform fi g . 13 e as test circuit & waveform SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 11 of 13 fig. 14 diode reverse recovery time test circuit & waveform SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 12 of 13 recommended land pattern [unit: mm] package outline dimensions SUF2001
rev. date: 13-mar-13 ksd-t7f002-001 www .auk.co.kr 13 of 13 the auk corp. products are intended for the use as components in general electronic equipment (office and communication e quipment, measuring equipment, home appliance, etc.). please make sure that you consult with us before you use these auk corp. products in equipments which require high quality and / or reliability, and in equipments which could have major impact to the welfare of human life(atomic energy control, airplane, spaceship, transportation, combustion control, all types of safet y device, etc.). auk corp. cannot accept liability to any damage which may occur in case these auk corp. products were used in the mentioned equi pments without prior consultation with auk corp.. specifications mentioned in this publicati on are subject to change without notice. SUF2001

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